FDM3622 |
Part Number | FDM3622 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switch... |
Features |
• Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A • Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free, Halide Free and is RoHS Compliant MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed 100 V ±20 V A 4.4 20 EAS Single Pulse Avalanche Energy (Note 3) 54 mJ PD Power Dissipation (No... |
Document |
FDM3622 Data Sheet
PDF 163.71KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FDM3622 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
2 | FDM3300NZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDM-2B |
ETC |
FDM-2B | |
4 | FDM100-0045SP |
IXYS Corporation |
Buck Chopper | |
5 | FDM21-05QC |
IXYS Corporation |
Q-Class Power MOSFETs |