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FDMB3800N |
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| Part Number | FDMB3800N |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching p... |
| Features |
• Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A • Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability • This Device is Pb−Free, Halide Free and is RoHS Compliant MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous TA = 25°C (Note 1a) − Pulsed 30 V ±20 V A 4.8 9 PD Power Dissipation TA = 25°C (Note 1a) TA = 25°C (Note... |
| Document |
 FDMB3800N Data Sheet
PDF 210.51KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMB3800N |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET |
|
| 2 | FDMB3900AN |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 3 | FDMB2307NZ |
Fairchild Semiconductor |
Dual Common Drain N-Channel MOSFET |
|
| 4 | FDMB2307NZ |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 5 | FDMB2308PZ |
Fairchild Semiconductor |
MOSFET |
|