2N7002P |
Part Number | 2N7002P |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-leve... |
Features |
• Logic-level compatible • Very fast switching • Trench MOSFET technology • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 500 mA; pulsed; tp ≤ resistance 300 µs; δ ≤ 0.01; Tj = 25 °C Min Typ Max Unit - - 60 V -20 - 20 V - - 360 mA - 1 1... |
Document |
2N7002P Data Sheet
PDF 278.99KB |
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