BSS138W |
Part Number | BSS138W |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | These N−Channel Enhancement Mode Field Effect Transistor. These products have been Designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These produc... |
Features |
• RDS(on) = 3.5 W @ VGS = 10 V, ID = 0.22 A RDS(on) = 6.0 W @ VGS = 4.5 V, ID = 0.22 A • High Density Cell Design For Extremely Low RDS(on) • Rugged and Reliable • Compact Industry Standard SOT−323 Surface Mount Package • These Devices are Pb−Free and Halide Free ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS VGSS ID Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (Note 1) − Pulsed 50 V ±20 V A 0.21 A 0.84 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C TL Maximum Lead Temperature... |
Document |
BSS138W Data Sheet
PDF 250.41KB |
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