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SCTHS250N65G2G |
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| Part Number | SCTHS250N65G2G |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code
23
SCTHS250N65G2G
VDS 650 V
RDS(on) typ. 8.0 mΩ
ID 250 A
• AEC-Q101 qualified 1 • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV NG3DS2PS1D4 Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of swi... |
| Document |
 SCTHS250N65G2G Data Sheet
PDF 260.34KB |
| Distributor | Stock | Price | Buy |
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