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SCT1000N170 |
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| Part Number | SCT1000N170 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching ... |
| Features |
Order code
VDS
RDS(on) max.
ID
SCT1000N170
1700 V
1.3 Ω
7A
• High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C) Applications • Auxiliary power supply for server • Switch mode power supply Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal prope... |
| Document |
 SCT1000N170 Data Sheet
PDF 300.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SCT1000N170AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 2 | SCT10N120 |
STMicroelectronics |
Silicon carbide Power MOSFET |
|
| 3 | SCT10N120AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 4 | SCT12N60FD |
KODENSHI |
12A Standard Triac |
|
| 5 | SCT12N60P |
KODENSHI |
12A Standard Triac |
|