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2N7002H |
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| Part Number | 2N7002H |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatibl... |
| Features |
• Logic-level compatible • Very fast switching • Trench MOSFET technology • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 360 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 500 mA; Tj = 25 °C resistance - 1 1.6 Ω [1] Device mounted on an FR... |
| Document |
 2N7002H Data Sheet
PDF 278.36KB |
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