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SCT025H120G3AG |
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| Part Number | SCT025H120G3AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature ... |
| Features |
Order code SCT025H120G3AG
VDS 1200 V
RDS(on) typ. 27 mΩ
ID 55 A
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The ... |
| Document |
 SCT025H120G3AG Data Sheet
PDF 364.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SCT025W120G3-4AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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| 2 | SCT025W120G3AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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| 3 | SCT020H120G3AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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| 4 | SCT027W65G3-4AG |
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Automotive-grade silicon carbide Power MOSFET |
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| 5 | SCT011H75G3AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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