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HGTG10N120BND |
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| Part Number | HGTG10N120BND |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Symbol HGTG10N120BND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 35 A IC110 17 A Collector Current Pulsed (Note 1) Gate t... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49302.
Features
• 35 A, 1200 V, TC = 25°C • 1200 V Switching SOA Capability • Typica... |
| Document |
 HGTG10N120BND Data Sheet
PDF 436.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HGTG10N120BN |
Fairchild Semiconductor |
35A/ 1200V/ NPT Series N-Channel IGBT |
|
| 2 | HGTG10N120BN |
Intersil Corporation |
N-Channel IGBT |
|
| 3 | HGTG10N120BND |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 4 | HGTG10N120BND |
Intersil Corporation |
N-Channel IGBT |
|
| 5 | HGTG11N120CN |
Fairchild Semiconductor |
N-Channel IGBT |
|