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HGTG11N120CND |
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| Part Number | HGTG11N120CND |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Symbol HGTG11N120CND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 43 A IC110 22 A Collector Current Pulsed (Note 1) Gate t... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49303.
Features
• 43 A, 1200 V, TC = 25°C • 1200 V Switching SOA Capability • Typica... |
| Document |
 HGTG11N120CND Data Sheet
PDF 435.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HGTG11N120CN |
Fairchild Semiconductor |
N-Channel IGBT |
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| 2 | HGTG11N120CN |
Intersil Corporation |
N-Channel IGBT |
|
| 3 | HGTG11N120CND |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 4 | HGTG11N120CND |
Intersil Corporation |
N-Channel IGBT |
|
| 5 | HGTG10N120BN |
Fairchild Semiconductor |
35A/ 1200V/ NPT Series N-Channel IGBT |
|