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PHP18NQ11T |
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| Part Number | PHP18NQ11T |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 110V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
| Features |
50µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS=18A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=9A
IGSS
Gate-Body Leakage Current
VGS= ±10V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 110V; VGS= 0
PHP18NQ11T
MIN TYPE MAX UNIT
110
V
2.0
4.0
V
1.2
V
0.09
Ω
±100 nA
10
µA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for... |
| Document |
 PHP18NQ11T Data Sheet
PDF 260.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PHP18NQ11T |
nexperia |
N-channel MOSFET |
|
| 2 | PHP18NQ11T |
NXP Semiconductors |
N-Channel FET |
|
| 3 | PHP18NQ10T |
NXP |
N-channel TrenchMOS transistor |
|
| 4 | PHP18NQ10T |
nexperia |
N-channel MOSFET |
|
| 5 | PHP18NQ20T |
NXP |
N-channel TrenchMOS transistor |
|