FDMS3606AS ON Semiconductor Asymmetric Dual N-Channel MOSFET Datasheet, en stock, prix

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FDMS3606AS

ON Semiconductor
FDMS3606AS
FDMS3606AS FDMS3606AS
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Part Number FDMS3606AS
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The co...
Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement...

Document Datasheet FDMS3606AS Data Sheet
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