2SK1482 |
Part Number | 2SK1482 |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. The device featuring low on-state resistance is of the... |
Features |
• Low on-state resistance RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A) • Voltage drive at logic level (VGS = 4 V) is possible. • Bidirectional zener diode for protection is incorporated in between the gate and the source. • Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source. • Can be used complementary with the 2SJ196. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) VDSS VGSS 30 V ±20 V Drain Current (DC)... |
Document |
2SK1482 Data Sheet
PDF 131.65KB |
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