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2N6422 |
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| Part Number | 2N6422 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications AB... |
| Features |
tage IC= -0.75A; IB=-0.075A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB=-0.125A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -0.75A; IB=-0.075A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -1A; IB=-0.125A
hFE-1
DC Current Gain
IC=-1A; VCE=-2V
hFE-2
DC Current Gain
IC=-1A; VCE= -10V
2N6422
MIN TYP. MAX UNIT
-300
V
-500 uA
-5
mA
-0.75 V
-0.75 V
-1.4
V
-1.4
V
8
80
25
100
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide ... |
| Document |
 2N6422 Data Sheet
PDF 217.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6420 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 2 | 2N6420 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2N6421 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 4 | 2N6421 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 5 | 2N6422 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|