2N6378 INCHANGE Silicon PNP Power Transistor Datasheet, en stock, prix

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2N6378

INCHANGE
2N6378
2N6378 2N6378
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Part Number 2N6378
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : VCEO=-100V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications AB...
Features ion Voltage IC=-20A; IB=- 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-50A; IB= -10A VBE(sat)-1 Base-Emitter Saturation Voltage IC=-20A; IB=- 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC=-50A; IB= -10A hFE-1 DC Current Gain IC=-1A; VCE= -4V hFE-2 DC Current Gain IC=-20A; VCE= -4V hFE-3 DC Current Gain IC=-50A; VCE=-4V MIN TYP. MAX UNIT -100 V -100 uA -0.05 mA -1.2 V -3 V -1.8 V -3.5 V 50 30 120 10 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is...

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