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2SC1060 |
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| Part Number | 2SC1060 |
| Manufacturer | INCHANGE |
| Description | ·With TO-220 package ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device perfor... |
| Features |
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC =5mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE =5mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 20V; IB=0
IEBO
Emitter Cutoff Current
VEB= 4V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 5A ; VCE= 2V
hFE Classifications A B C D 35-70 60-120 100-200 160-320 2SC1060 MIN MAX UNIT 50 V 50 V 4 V 1.0 V ... |
| Document |
 2SC1060 Data Sheet
PDF 225.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1060 |
ETC |
Silicon NPN Transistor |
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| 2 | 2SC1061 |
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NPN EPITAXIAL SILICON TRANSISTOR |
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| 3 | 2SC1061 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
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| 4 | 2SC1000 |
Toshiba |
Silicon NPN Transistor |
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| 5 | 2SC1000 |
ETC |
Silicon NPN Transistor |
|