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DP3N10 |
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| Part Number | DP3N10 |
| Manufacturer | Developer Microelectronics |
| Description | DP3N10 N-Channel 100V(D.S)MOSFT MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.126 at VGS = 10 V 3.1 100 0.134 at VGS = 6 V 2.9 0.139 at VGS = 4.5 V 2.6 Qg (Typ.) 2.9 nC D D ... |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: APPLICATIONS • DC/DC Converters / Boost Converters • Load Switch • LED Backlighting in LCD TVs • Power Management for Mobile Computing G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature R... |
| Document |
 DP3N10 Data Sheet
PDF 29.77KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | DP3 |
JAE |
Connector Interface |
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| 2 | DP302 |
Temex |
Silicon Beam-Lead Schottky Barrier Detector Diodes |
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| 3 | DP3090 |
Developer Microelectronics |
N-Channel MOSFET |
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| 4 | DP30D600T*1016xx |
Danfoss Silicon Power GmbH |
E2 IGBT |
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| 5 | DP30E600T*1016xx |
Danfoss Silicon Power GmbH |
E2 IGBT |
|