IRFU220 |
Part Number | IRFU220 |
Manufacturer | INCHANGE |
Description | iscN-Channel MOSFET Transistor IRFU220 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤0.8Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum ... |
Features |
·Low drain-source on-resistance: RDS(ON) ≤0.8Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 4.8 A IDM Drain Current-Single Pulsed 19 A PD Total Dissipation @TC=25℃ 42 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature ... |
Document |
IRFU220 Data Sheet
PDF 291.35KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IRFU220 |
Intersil Corporation |
N-Channel Power MOSFETs | |
2 | IRFU220 |
Vishay Siliconix |
Power MOSFET | |
3 | IRFU220 |
International Rectifier |
Power MOSFET | |
4 | IRFU220A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
5 | IRFU220B |
Fairchild Semiconductor |
200V N-Channel MOSFET |