IRFP22N50A |
Part Number | IRFP22N50A |
Manufacturer | INCHANGE |
Description | iscN-Channel MOSFET Transistor IRFP22N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.23Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum... |
Features |
·Low drain-source on-resistance: RDS(ON) =0.23Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pulsed 88 A PD Total Dissipation @TC=25℃ 277 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -... |
Document |
IRFP22N50A Data Sheet
PDF 395.16KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP22N50A |
Vishay |
Power MOSFET | |
2 | IRFP22N50A |
International Rectifier |
SMPS MOSFET | |
3 | IRFP22N50APBF |
IRF |
Power MOSFET | |
4 | IRFP22N60K |
International Rectifier |
SMPS MOSFET | |
5 | IRFP22N60K |
Vishay |
Power MOSFET |