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STD7ANM60N |
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| Part Number | STD7ANM60N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-... |
| Features |
·With TO-252(DPAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous;@Tc=25℃ 5 A IDM Drain Current-Single Pulsed 20 A PD Total Dissipation 45 W Tj Operating Junction Temperature 150 ℃ Tstg Storage Temperature... |
| Document |
 STD7ANM60N Data Sheet
PDF 257.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STD7ANM60N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STD70 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |
|
| 3 | STD70GK08 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |
|
| 4 | STD70GK12 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |
|
| 5 | STD70GK14 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |
|