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STB7ANM60N |
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| Part Number | STB7ANM60N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to... |
| Features |
·With TO-263(D2PAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous;@Tc=25℃ 5 A IDM Drain Current-Single Pulsed 20 A PD Total Dissipation 45 W Tj Operating Junction Temperature 150 ℃ Tstg Storage Temperatur... |
| Document |
 STB7ANM60N Data Sheet
PDF 246.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB7ANM60N |
STMicroelectronics |
N-channel Power MOSFET |
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| 2 | STB7001 |
STMicroelectronics |
900MHz THREE GAIN LEVEL LNA |
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| 3 | STB70L60 |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| 4 | STB70N10F4 |
STMicroelectronics |
N-CHANNEL MOSFET |
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| 5 | STB70NF03L |
ST Microelectronics |
N-CHANNEL MOSFET |
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