SPP04N60C3 |
Part Number | SPP04N60C3 |
Manufacturer | INCHANGE |
Description | ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Con... |
Features |
·Static drain-source on-resistance: RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 13.5 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃... |
Document |
SPP04N60C3 Data Sheet
PDF 234.51KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP04N60C2 |
Infineon |
Cool MOS Power Transistor | |
2 | SPP04N60C3 |
Infineon |
Power Transistor | |
3 | SPP04N60C3 |
INCHANGE |
TO-220C N-Channel MOSFET | |
4 | SPP04N60S5 |
Infineon |
Power Transistor | |
5 | SPP04N60S5 |
INCHANGE |
N-Channel MOSFET |