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SPB21N50C3 |
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| Part Number | SPB21N50C3 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-... |
| Features |
·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 PD Total Dissipation @TC=25℃ 34.5 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ SPB21N50C3 ·THERM... |
| Document |
 SPB21N50C3 Data Sheet
PDF 224.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB21N50C3 |
Infineon Technologies |
Power Transistor |
|
| 2 | SPB21N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 3 | SPB21N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 4 | SPB200UFA |
VMI |
(SPBxx0UFA) Single Phase Bridge |
|
| 5 | SPB200UFB |
VMI |
(SPBxx0UFB) Single Phase Bridge |
|