SPA07N60C3 |
Part Number | SPA07N60C3 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA07N60C3 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction ... |
Features |
·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 7.3 4.6 21.9 PD Total Dissipation @TC=25℃ 32 Tj Max. Operating Junction Temperature -55~150 Tstg St... |
Document |
SPA07N60C3 Data Sheet
PDF 219.11KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA07N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
2 | SPA07N60C3 |
Infineon Technologies |
Power Transistor | |
3 | SPA07N60CFD |
Infineon Technologies |
Power-Transistor | |
4 | SPA07N60CFD |
INCHANGE |
N-Channel MOSFET | |
5 | SPA07N65C3 |
Infineon Technologies |
Cool MOS Power Transistor |