RD3P050SN |
Part Number | RD3P050SN |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor RD3P050SN ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations... |
Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 5 IDM Drain Current-Single Pulsed 20 PD Total Dissipation @TC=25℃ 15 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ... |
Document |
RD3P050SN Data Sheet
PDF 195.52KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | RD3P050SN |
ROHM |
Nch 100V 5A Power MOSFET | |
2 | RD3P050SNFRA |
ROHM |
Power MOSFET | |
3 | RD3P100SN |
INCHANGE |
N-Channel MOSFET | |
4 | RD3P100SN |
ROHM |
Power MOSFET | |
5 | RD3P130SP |
INCHANGE |
P-Channel MOSFET |