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IXTP7N60P |
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| Part Number | IXTP7N60P |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXTP7N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.1Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 1.1Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7 IDM Drain Current-Single Pulsed 14 PD Total Dissipation @TC=25℃ 150 Tj Operating Junction Temperature -55~150 Tstg St... |
| Document |
 IXTP7N60P Data Sheet
PDF 247.04KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTP7N60P |
IXYS |
Power MOSFET |
|
| 2 | IXTP7N60PM |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTP7N60PM |
IXYS Corporation |
Power MOSFET |
|
| 4 | IXTP70N075T2 |
IXYS |
Power MOSFET |
|
| 5 | IXTP70N075T2 |
INCHANGE |
N-Channel MOSFET |
|