FDPF085N10A |
Part Number | FDPF085N10A |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor FDPF085N10A ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 8.5mΩ@VGS=10V ·100% avalanche tested ... |
Features |
·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 8.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 40 A IDM Drain Current-Single Pulsed 160 A PD Total Dissipation 33.3 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage ... |
Document |
FDPF085N10A Data Sheet
PDF 270.13KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDPF085N10A |
Fairchild Semiconductor |
MOSFET | |
2 | FDPF035N06B |
Fairchild Semiconductor |
MOSFET | |
3 | FDPF035N06B |
ON Semiconductor |
N-Channel Power MOSFET | |
4 | FDPF035N06B-F154 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDPF041N06BL1 |
Fairchild Semiconductor |
MOSFET |