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SPD06N60C3 |
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| Part Number | SPD06N60C3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.75Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust ... |
| Features |
·Static drain-source on-resistance: RDS(on)≤0.75Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.2 IDM Drain Current-Single Pulsed 18.6 PD Total Dissipation @TC=25℃ 74 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER... |
| Document |
 SPD06N60C3 Data Sheet
PDF 240.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD06N60C3 |
Infineon Technologies AG |
CoolMOS Power Transistor |
|
| 2 | SPD06N80C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPD06N80C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPD005G |
Smartec |
(SPD Series) Smartec Pressure Sensor |
|
| 5 | SPD01510KS |
SiPower |
Spandard Recovery Diodes |
|