SPD03N60S5 INCHANGE N-Channel MOSFET Datasheet, en stock, prix

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SPD03N60S5

INCHANGE
SPD03N60S5
SPD03N60S5 SPD03N60S5
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Part Number SPD03N60S5
Manufacturer INCHANGE
Description isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust ...
Features
·Static drain-source on-resistance: RDS(on)≤1.4Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Improved transconductance
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.2 IDM Drain Current-Single Pulsed 5.7 PD Total Dissipation @TC=25℃ 38 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(...

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