IRFR1205 |
Part Number | IRFR1205 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IRFR1205, IIRFR1205 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev... |
Features |
·Static drain-source on-resistance: RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 44 IDM Drain Current-Single Pulsed 160 PD Total Dissipation @TC=25℃ 107 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channe... |
Document |
IRFR1205 Data Sheet
PDF 236.89KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IRFR120 |
International Rectifier |
POWER MOSFET | |
2 | IRFR120 |
Intersil Corporation |
N-Channel Power MOSFETs | |
3 | IRFR120 |
Vishay Siliconix |
Power MOSFET | |
4 | IRFR1205 |
International Rectifier |
Power MOSFET | |
5 | IRFR1205PBF |
International Rectifier |
Power MOSFET |