IRFB7530 |
Part Number | IRFB7530 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IRFB7530,IIRFB7530 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot varia... |
Features |
·Static drain-source on-resistance: RDS(on) ≤2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 944 PD Total Dissipation @TC=25℃ 375 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ... |
Document |
IRFB7530 Data Sheet
PDF 241.40KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | IRFB7530PbF |
International Rectifier |
Power MOSFET | |
2 | IRFB7534 |
INCHANGE |
N-Channel MOSFET | |
3 | IRFB7534PbF |
Infineon |
Power MOSFET | |
4 | IRFB7537 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFB7540 |
INCHANGE |
N-Channel MOSFET |