IPW60R280E6 |
Part Number | IPW60R280E6 |
Manufacturer | INCHANGE |
Description | ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Vo... |
Features |
·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13.8 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 104 Tj Max. Operating Junction Temperature 150 Tstg Storage Temper... |
Document |
IPW60R280E6 Data Sheet
PDF 241.11KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IPW60R280E6 |
Infineon Technologies |
Power Transistor | |
2 | IPW60R280C6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPW60R280C6 |
Infineon Technologies |
MOSFET | |
4 | IPW60R280P6 |
INCHANGE |
N-Channel MOSFET | |
5 | IPW60R280P6 |
Infineon |
MOSFET |