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IPP65R600C6 |
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| Part Number | IPP65R600C6 |
| Manufacturer | INCHANGE |
| Description | ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Vo... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 63 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperatu... |
| Document |
 IPP65R600C6 Data Sheet
PDF 240.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP65R600C6 |
Infineon Technologies |
Power Transistor |
|
| 2 | IPP65R600E6 |
Infineon Technologies |
MOSFET |
|
| 3 | IPP65R600E6 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPP65R660CFD |
Infineon Technologies |
Power Transistor |
|
| 5 | IPP65R660CFD |
INCHANGE |
N-Channel MOSFET |
|