Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
IPD060N03L |
Click to view a larger image
| Part Number | IPD060N03L |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
| Features |
·Static drain-source on-resistance: RDS(on)≤6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 56 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-... |
| Document |
 IPD060N03L Data Sheet
PDF 236.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD060N03L |
Infineon |
MOSFET |
|
| 2 | IPD060N03LG |
Infineon Technologies |
MOSFET |
|
| 3 | IPD068N10N3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPD068N10N3 |
Infineon |
Power-Transistor |
|
| 5 | IPD068N10N3G |
Infineon Technologies |
Power-Transistor |
|