UTT30N10 |
Part Number | UTT30N10 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor UTT30N10 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations ... |
Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 79 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS... |
Document |
UTT30N10 Data Sheet
PDF 257.96KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | UTT30N10 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | UTT30N05 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
3 | UTT30N06 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
4 | UTT30N08 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
5 | UTT30NP30 |
Unisonic Technologies |
DUAL POWER MOSFET |