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RJK6014DPK |
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| Part Number | RJK6014DPK |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device ... |
| Features |
·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 16 IDM Drain Current-Single Pulsed 32 PD Total Dissipation 150 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS S... |
| Document |
 RJK6014DPK Data Sheet
PDF 253.86KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK6014DPK |
Renesas Technology |
Silicon N-Channel MOSFET |
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| 2 | RJK6014DPP |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 3 | RJK6011DJA |
Renesas |
High Speed Power Switching MOS FET |
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| 4 | RJK6011DJE |
Renesas |
N-Channel Power MOSFET |
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| 5 | RJK6012DPE |
Renesas |
N-Channel Power MOSFET |
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