MTD300N20J3 |
Part Number | MTD300N20J3 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor MTD300N20J3 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio... |
Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 8.3 5.3 18 PD Total Dissipation @TC=25℃ 50 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CH... |
Document |
MTD300N20J3 Data Sheet
PDF 257.66KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | MTD300N20J3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTD300A20Q8 |
Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET | |
3 | MTD3010PM |
Marktech Corporate |
Photo Diode | |
4 | MTD3055E |
Motorola |
TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK | |
5 | MTD3055EL |
Motorola |
TMOS IV Power Field Effect Transistor |