MMD60R580Q |
Part Number | MMD60R580Q |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor MMD60R580Q ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variation... |
Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 8 5 24 PD Total Dissipation @TC=25℃ 45 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACT... |
Document |
MMD60R580Q Data Sheet
PDF 258.78KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | MMD60R580P |
MagnaChip |
N-channel MOSFET | |
2 | MMD60R580PB |
MagnaChip |
N-Channel MOSFET | |
3 | MMD60R580Q |
MagnaChip |
N-Channel MOSFET | |
4 | MMD60R580RZ |
MagnaChip |
N-channel MOSFET | |
5 | MMD60R1K0RFZ |
MagnaChip |
N-Channel MOSFET |