IRFS31N20D |
Part Number | IRFS31N20D |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor IRFS31N20D ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio... |
Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 31 21 124 PD Total Dissipation @TC=25℃ 200 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CH... |
Document |
IRFS31N20D Data Sheet
PDF 253.79KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFS31N20D |
IRF |
Power MOSFET | |
2 | IRFS31N20DPBF |
International Rectifier |
Power MOSFET | |
3 | IRFS3107-7PPBF |
International Rectifier |
Power MOSFET | |
4 | IRFS3107PbF |
International Rectifier |
Power MOSFET | |
5 | IRFS3107PbF |
INCHANGE |
N-Channel MOSFET |