IPU60R1K0CE |
Part Number | IPU60R1K0CE |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliab... |
Features |
·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 6.8 IDM Drain Current-Single Pulsed 12 PD Total Dissipation 61 Tj Operating Junction Temperature -40~150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARAC... |
Document |
IPU60R1K0CE Data Sheet
PDF 257.32KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IPU60R1K0CE |
Infineon Technologies |
MOSFET | |
2 | IPU60R1K4C6 |
Infineon Technologies |
MOSFET | |
3 | IPU60R1K4C6 |
INCHANGE |
N-Channel MOSFET | |
4 | IPU60R1K5CE |
Infineon Technologies |
MOSFET | |
5 | IPU60R1K5CE |
INCHANGE |
N-Channel MOSFET |