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FQP20N06L |
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| Part Number | FQP20N06L |
| Manufacturer | INCHANGE |
| Description | ·Drain Current ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device pe... |
| Features |
(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250uA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 250uA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 10A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
VSD
Diode Forward Voltage
IS= 21A; VGS= 0
MIN TYPE MAX UNIT
60
V
1
1.6
2.5
V
35
55
mΩ
±100 nA
1
uA
1.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein i... |
| Document |
 FQP20N06L Data Sheet
PDF 253.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQP20N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 2 | FQP20N06 |
Freescale |
N-Channel 60-V (D-S) MOSFET |
|
| 3 | FQP20N06L |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 4 | FQP20N60 |
Oucan Semi |
20A N-Channel MOSFET |
|
| 5 | FQP22N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|