FDP26N40 |
Part Number | FDP26N40 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot var... |
Features |
·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 400 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 26 15.6 104 PD Total Dissipation 265 Tj Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V... |
Document |
FDP26N40 Data Sheet
PDF 255.52KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FDP26N40 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDP2614 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
3 | FDP2614 |
INCHANGE |
N-Channel MOSFET | |
4 | FDP2670 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FDP20AN06A0 |
Fairchild Semiconductor |
N-Channel MOSFET |