FCB199N65S3 |
Part Number | FCB199N65S3 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor FCB199N65S3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variati... |
Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 14 9 35 PD Total Dissipation @TC=25℃ 98 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARA... |
Document |
FCB199N65S3 Data Sheet
PDF 254.35KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FCB199N65S3 |
ON Semiconductor |
MOSFET | |
2 | FCB110N65F |
Fairchild Semiconductor |
MOSFET | |
3 | FCB110N65F |
INCHANGE |
N-Channel MOSFET | |
4 | FCB11N60 |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FCB11N60F |
Fairchild Semiconductor |
N-Channel MOSFET |