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IRFP4368 |
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| Part Number | IRFP4368 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4368，IIRFP4368 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% ... |
| Features |
·Static drain-source on-resistance: RDS(on)≤1.85mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 1280 PD Total Dissipatio... |
| Document |
 IRFP4368 Data Sheet
PDF 239.75KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFP4368PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRFP4310Z |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRFP4310ZPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRFP4321 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRFP4321PBF |
International Rectifier |
HEXFET Power MOSFET |
|