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IPW50R350CP |
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| Part Number | IPW50R350CP |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R350CP IIPW50R350CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤350mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-... |
| Features |
·Static drain-source on-resistance: RDS(on)≤350mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Peak Current Capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 22 PD Total Dissipation @TC=25℃ 89 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER R... |
| Document |
 IPW50R350CP Data Sheet
PDF 238.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPW50R350CP |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPW50R399CP |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPW50R399CP |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPW50R140CP |
Infineon Technologies |
Power Transistor |
|
| 5 | IPW50R140CP |
INCHANGE |
N-Channel MOSFET |
|