IPP042N03L |
Part Number | IPP042N03L |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP042N03L,IIPP042N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.2mΩ ·Enhancement mode: ·Fast Switching Speed ·100% avalanche te... |
Features |
·Static drain-source on-resistance: RDS(on) ≤4.2mΩ ·Enhancement mode: ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 70 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 79 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W... |
Document |
IPP042N03L Data Sheet
PDF 241.52KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPP042N03L |
Infineon |
Power-Transistor | |
2 | IPP042N03LG |
Infineon Technologies |
Power-Transistor | |
3 | IPP040N06N |
Infineon Technologies |
Power-Transistor | |
4 | IPP040N06N |
INCHANGE |
N-Channel MOSFET | |
5 | IPP040N06N3 |
INCHANGE |
N-Channel MOSFET |