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BUK436-800A |
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| Part Number | BUK436-800A |
| Manufacturer | INCHANGE |
| Description | ·Drain Source Voltage- : VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode... |
| Features |
or
INCHANGE Semiconductor
BUK436-800A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA 800 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 2.0 RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A BUK436-800A BUK436-800B IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 4.0 V 3 Ω 4 Ω ±100 nA IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 1.0 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification... |
| Document |
 BUK436-800A Data Sheet
PDF 231.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUK436-800B |
INCHANGE |
N-Channel MOSFET |
|
| 2 | BUK436-100A |
Philips |
PowerMOS transistor |
|
| 3 | BUK436-100A |
INCHANGE |
N-Channel MOSFET |
|
| 4 | BUK436-100B |
Philips |
PowerMOS transistor |
|
| 5 | BUK436-100B |
INCHANGE |
N-Channel MOSFET |
|