BD676 INCHANGE PNP Transistor Datasheet, en stock, prix

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BD676

INCHANGE
BD676
BD676 BD676
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Part Number BD676
Manufacturer INCHANGE
Description ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD675 ·Minimum Lot-to-Lot variations for robust device performance and reli...
Features CTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA VBE(on) Base-Emitter On Voltage IC= -1.5A; VCE= -3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= -45V; IB= 0 VCB= -45V; IE= 0 VCB= -45V; IE= 0;TC= 100℃ VEB= -5V; IC= 0 hFE DC Current Gain IC= -1.5 A ; VCE= -3V BD676 MIN MAX UNIT -45 V -2.5 V -2.5 V -0.5 mA -0.2 -2.0 mA -2.0 mA 750 NOTICE: ISC reserves the rights to ...

Document Datasheet BD676 Data Sheet
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