Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BD652 |
Click to view a larger image
| Part Number | BD652 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD651 ·Minimum Lot-to-Lot variations for robust ... |
| Features |
unction to Ambient
isc website：www.iscsemi.com
70 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
BD652
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
-120
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -50mA
-2.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -12A; IB= -120mA
-3.0
V
VBE(on) Base-Emitter On Voltage
IC= -3A... |
| Document |
 BD652 Data Sheet
PDF 190.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BD650 |
Bourns Electronic Solutions |
PNP SILICON POWER DARLINGTONS |
|
| 2 | BD650 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BD650 |
Comset Semiconductors |
Power Transistor |
|
| 4 | BD650 |
INCHANGE |
PNP Transistor |
|
| 5 | BD650CS |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
|