BD649 INCHANGE NPN Transistor Datasheet, en stock, prix

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BD649

INCHANGE
BD649
BD649 BD649
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Part Number BD649
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD650 ·Minimum Lot-to-Lot variations for robust de...
Features t 62.5 ℃/W BD649 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD649 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V ICBO Collector Cutoff Current VCB= 100V; IE= 0 VCB= 60V; I...

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